@inproceedings{Veith-Wolf2016,

title = {Effect of UV illumination on the passivation quality of AlOx/c-Si interfaces},

author = {B Veith-Wolf and R Witteck and A Morlier and H Schulte-Huxel and J Schmidt},

editor = {IEEE},

doi = {10.1109/PVSC.2016.7749799},

isbn = {978-1-5090-2725-5},

year  = {2016},

date = {2016-06-01},

booktitle = {2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)},

journal = {Proceedings of the 43rd IEEE Photovoltaic Specialists Conference},

pages = {1173-1178},

address = {Portland, OR, USA},

abstract = {We report on the stability of the c-Si surface passivation quality by aluminum oxide (AlOx), silicon nitride (SiNp), and AlOx/SiNy stacks under UV illumination. Low-temperature annealed AlOx shows a weak degradation during UV illumination, with surface recombination velocities (SRVs) of 25 cm/s after a UV dose of 275 kWh/m2. This degradation is less pronounced compared to that of fired SiNy layers with an SRV of 117 cm/s. After a firing step, the AlOx layer show even an improvement during UV illumination, resulting in stabilized SRVs of down to 1 cm/s. The improvement is mainly due to an increase of the negative fixed charge density in the AlOx layer up to a large value of -1.2×10^13 cm-2.},

keywords = {},

pubstate = {published},

tppubtype = {inproceedings}

}