ISFH is participating in this year’s SiliconPV, which takes place from 8 to 10 April in Leuven, Belgium, with a total of 14 contributions. In addition to two tutorials, there will be nine oral presentations and three poster presentations:
The tutorials will take place on Sunday, 7 April. The first, held by Dennis Bredemeier (ISFH) and Axel Herguth (University of Constance), will discuss The Role of H in Passivating Silicon Defects. In the third tutorial, Prof. Dr. Robby Peibst (ISFH) and Dr. Frank Feldmann (Fraunhofer ISE) will give an overview of Passivating Contacts Beyond a-Si:H/c-Si Heterojunctions.
On Monday, 8 April, after lunch, Dr. Boris Veith-Wolf will present his poster entitled “Low-Temperature Silicon Surface Passivation for Bulk Lifetime Studies Based on Corona-Charged Al2O3” (S1-31). In Session 3: Growing Insights in Light- and Temperature Induced Degradation Mechanisms, Dennis Bredemeier (Impact of SiNx:H Material Properties on Light and Elevated Temperature Induced Degradation (LeTID) in Mc-Si) and Michael Winter (Absence of Light and Elevated Temperature Induced Degradation (LeTID) of the Carrier Lifetime in Boron-Doped Cz-Silicon) will report on their results.
In the last session on Monday (Session 4: Progress in Process Step Development) there will be a presentation by Dr. Nadine Wehmeier on “Inkjet-Printing of Phosphorus- and Boron-Doped Liquid Silicon Ink for Interdigitated Back Contact Solar Cells“. The penultimate talk of the day will be given by Philip Jäger: Impact of the Thermal Budget of the Emitter Formation on the pFF of PERC+ Solar Cells.
On Tuesday morning Session 6 – Detailed Studies on Hydrogen-In-Si will take place. Dr. Dominic Walter will introduce his “Easy-to-Apply Methodology to Measure the Hydrogen Concentration in Boron-Doped Crystalline Silicon“. In Session 7: Novel Cell Interconnection Technologies and Module Degradation, on Tuesday after lunch, Dr. Henning Schulte-Huxel will share his work on “Interconnect-Shingling: Maximizing the Active Module Area with Conventional Module Processes“.
Prof. Dr. Jan Schmidt looks back on “Surface Passivation of Crystalline Silicon Solar Cells: Past, Present and Future” in a 30-minute Review on Wednesday morning. In Poster Session 4: Silicon Material Investigation after lunch Lailah Helmich explains her poster entitled “Direct Examination of the Boron-Oxygen Deactivation Via Electroluminescence Characterization of Cz-Si Solar Cells Under Regeneration Conditions” (S4-10).
A little later, in session 11: Progress in Kerfless Wafering, Catherin Gemmel will present “Statistics of the Detachment Yield for Crystalline Silicon Layer Transfer Using the Porous Silicon Proces“. Dr. Martin Rudolph will report his findings on “PERC+ solar cells with screen-printed dashed Ag front contacts” (S5-27) in Poster Session 5: Advanced Solar Cell Processing, before Dr. Sören Schäfer will talk about “26%-efficient and 2 cm narrow interdigitated back contact silicon solar cells with passivated slits on two edges” in the last session (session 12: High Efficiency PERX and IBC Solar Cell Processing).