2Power – Installation of a laboratory for Si-perovskite tandem solar cells

Contact
Dr. Thorsten Dullweber
Abteilungsleiter PV: Infrastruktur
Tel.: +49(0)5151-999 642
E-Mail: dullweber@isfh.de

ISFH is pursuing a novel tandem approach for the crystalline silicon (c-Si) ‘ bottom solar cell, building on the c-Si solar cells developed at ISFH in recent years. ISFH has made important contributions to the development of ‘passivated emitter and rear cell’ (PERC, monofacial – rear side fully printed with aluminum) and PERC+ (bifacial – rear side with aluminum fingergrid) solar cells over the past 12 years, which now account for about 70% of the world market. In addition, over the past 6 years, ISFH has developed the passivating ‘polycrystalline (poly) silicon on oxide’ (POLO) contacts based on poly-Si with a laboratory record efficiency of 26.1%. In the 2Power project, ISFH is installing a new deposition system and developing new deposition processes that are central to the fabrication and further development of the novel industrial perovskite silicon tandem solar cell. The new ‘plasma-enhanced chemical vapor deposition’ (PECVD) system will enable the single-sided deposition of doped poly-Si films and also the deposition of aluminum-doped zinc oxide (ZnO:Al) using PECVD. The combination of both layer systems is a very promising candidate for the electrical contact between a silicon bottom and a perovskite top solar cell. The backside of the bottom solar cell is equivalent to the PERC+ solar cell, for which the new PECVD system provides industrial deposition of aluminum oxide (AlOx)/silicon nitride (SiN) layers. In the 2Power project, all 4 PECVD deposition processes (ZnO:Al, phosphorus (n) – , boron (p) doped poly-Si, AlOx/SiN) will be run-in and optimized, demonstrating an open circuit voltage (Voc) of the c-Si bottom solar cell > 700 mV.
   
Duration 01.11.2020 – 31.10.2022
Funding The project is funded by the Federal Ministry for Economic Affairs and Climate Action under grant no 03EE1098. The responsibility for the content of this publication lies with the authors.
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