Large area macroporous silicon layers for monocrystalline thin-film solar cells Proceedings Article
In: IEEE, (Hrsg.): 2010 35th IEEE Photovoltaic Specialists Conference, S. 003122-003124, Honolulu, HI, USA, 2010, ISSN: 0160-8371.
A freeware 1D emitter model for silicon solar cells Proceedings Article
In: IEEE, (Hrsg.): 2010 35th IEEE Photovoltaic Specialists Conference, S. 002188-002193, Honolulu, HI, USA, 2010, ISSN: 0160-8371.
Determination of the bulk lifetime of bare multicrystalline silicon wafers Artikel
In: Progress in Photovoltaics: Research and Applications, Bd. 18, Nr. 3, S. 204-208, 2010, ISSN: 1099-159X.
In: Journal of Applied Physics, Bd. 107, Nr. 10, S. 104509, 2010.
Picosecond laser ablation of SiO2 layers on silicon substrates Artikel
In: Bd. 99, Nr. 1, S. 151-158, 2010, ISSN: 1432-0630.
In: Semiconductor Science and Technology, Bd. 25, Nr. 5, S. 055001, 2010.
Modelling c-Si/SiNx interface recombination by surface damage Artikel
In: physica status solidi (RRL) – Rapid Research Letters, Bd. 4, Nr. 3-4, S. 91-93, 2010, ISSN: 1862-6270.
In: Journal of Applied Polymer Science, Bd. 115, Nr. 5, S. 2763-2766, 2010, ISSN: 1097-4628.
Detection of the voltage distribution in photovoltaic modules by electroluminescence imaging Artikel
In: Progress in Photovoltaics: Research and Applications, Bd. 18, Nr. 2, S. 100-106, 2010, ISSN: 1099-159X.
Macroporous Si as an absorber for thin-film solar cells Artikel
In: physica status solidi (RRL) – Rapid Research Letters, Bd. 4, Nr. 1-2, S. 40-42, 2010, ISSN: 1862-6270.
In: Electrochemistry Communications, Bd. 12, Nr. 2, S. 231-233, 2010, ISSN: 1388-2481.
Comprehensive model for recombination at a-Si:H/c-Si interfaces based on amphoteric defects Artikel
In: physica status solidi (c), Bd. 7, Nr. 2, S. 276-279, 2010, (Special Issue: 12th International Conference on the Formation of Semiconductor Interfaces (ICFSI-12)).
In: Applied Physics Letters, Bd. 96, Nr. 3, S. 032105, 2010.
Minority Carrier Lifetime in Czochralski Silicon Containing Oxide Precipitates Artikel
In: ECS Transactions, Bd. 33, Nr. 11, S. 121-132, 2010.
Mesoporous GaAs double layers for layer transfer processes Artikel
In: physica status solidi (a), Bd. 206, Nr. 12, S. 2872-2875, 2009, ISSN: 1862-6319.
In: Applied Physics Letters, Bd. 95, Nr. 23, S. 232109, 2009.
Combined dynamic and steady-state infrared camera based carrier lifetime imaging of silicon wafers Artikel
In: Journal of Applied Physics, Bd. 106, Nr. 11, S. 114506, 2009.
Recombination lifetimes in highly aluminum-doped silicon Artikel
In: Journal of Applied Physics, Bd. 106, Nr. 9, S. 093707, 2009.
In: physica status solidi (RRL) – Rapid Research Letters, Bd. 3, Nr. 9, S. 287-289, 2009, ISSN: 1862-6270.
Luminescence emission from forward- and reverse-biased multicrystalline silicon solar cells Artikel
In: Journal of Applied Physics, Bd. 106, Nr. 10, S. 104510, 2009.