@article{Wehmeier2016c,
title = {PECVD BSG diffusion sources for simplified high-efficiency n-PERT BJ and BJBC solar cells},
author = {N Wehmeier and B Lim and A Merkle and A Tempez and S Legendre and H Wagner and A Nowack and T Dullweber and P P Altermatt},
doi = {10.1109/JPHOTOV.2015.2493364},
year = {2016},
date = {2016-01-01},
journal = {IEEE Journal of Photovoltaics},
volume = {6},
number = {1},
pages = {119-125},
abstract = {We investigate boron silicate glasses (BSG) deposited by plasma-enhanced chemical vapor deposition (PECVD) as a boron diffusion source on n-type wafers for the simplified fabrication of crystalline Si solar cells by the codiffusion processes. By varying the SiH4/B2 H6 gas flow ratio and the layer thickness of the PECVD BSG layers, we obtain sheet resistivities in a wide range from 30 to 500 Ω/□ after thermal B drive-in. Emitter saturation current densities as low as J0e = 4 fA/cm2 (for Rsheet = 236 Ω/□) are demonstrated using PECVD BSG layers as diffusion sources. A boron concentration in the PECVD BSG of up to 6.4 × 1021 cm-3 is measured by plasma profiling time-of-flight mass spectrometry (PP-TOFMS). A process simulation model of the B diffusion from the PECVD BSG into the Si substrate reproduces the experimental B concentration profile in the Si, measured both by PP-TOFMS and electrochemical capacitance- voltage (ECV) measurements. We fabricate industrial-type passivated emitter and rear totally diffused back-junction (PERT BJ) solar cells, as well as back-junction back-contact cells on n-type wafers. Applying codiffusion from PECVD BSG layers and thus a lean process flow including only one high-temperature step, we demonstrate n-PERT BJ cells with conversion efficiencies of up to 19.85%.},
keywords = {Back-junction back-contact (BJBC) cell, boron, boron diffusion source, codiffusion, Conductivity, Fabrication, Furnaces, n-PERT solar cell, Photovoltaic cells, Plasma measurements, plasma-enhanced chemical vapor deposition (PECVD) boron silicate glass (BSG), silicon, simulation model},
pubstate = {published},
tppubtype = {article}
}

@inproceedings{Schmidt2010,
title = {Silicon surface passivation by ultrathin Al2O3 films and Al2O3/SiNx stacks},
author = {J Schmidt and B Veith and F Werner and D Zielke and R Brendel},
editor = {IEEE},
doi = {10.1109/PVSC.2010.5614132},
issn = {0160-8371},
year = {2010},
date = {2010-06-01},
booktitle = {2010 35th IEEE Photovoltaic Specialists Conference},
pages = {000885-000890},
address = {Honolulu, HI, USA},
keywords = {Aluminum oxide, Films, passivation, Plasma measurements, Plasmas, silicon},
pubstate = {published},
tppubtype = {inproceedings}
}

@inproceedings{Schmidt2008c,
title = {Atomic-layer-deposited aluminum oxide for the surface passivation of high-efficiency silicon solar cells},
author = {J Schmidt and A Merkle and B Hoex and M C M van de Sanden and W M M Kessels and R Brendel},
editor = {IEEE},
doi = {10.1109/PVSC.2008.4922636},
issn = {0160-8371},
year = {2008},
date = {2008-05-01},
booktitle = {2008 33rd IEEE Photovoltaic Specialists Conference},
pages = {1-5},
address = {San Diego, CA, USA},
keywords = {Aluminum oxide, atomic layer deposition, Atomic measurements, Oxidation, passivation, Photovoltaic cells, Plasma measurements, Plasma temperature, Silicon compounds, Velocity measurement},
pubstate = {published},
tppubtype = {inproceedings}
}