@inproceedings{Krügener2016b,

title = {Comparison of experimental emitter saturation current densities and simulated defect densities of boron-implanted emitters},

author = {J Krügener and F Kiefer and R Peibst and H J Osten},

editor = {IEEE},

doi = {10.1109/IIT.2016.7882856},

isbn = {978-1-5090-2025-6},

year  = {2016},

date = {2016-09-26},

booktitle = {Proceedings of the 21st International Conference on Ion Implantation Technology (IIT)},

journal = {Proceedings of the 21st International Conference on Ion Implantation Technology (IIT)},

address = {Tainan, Taiwan},

abstract = {Ion implantation of boron is a promising technique for the preparation of p-type emitters in n-type silicon solar cells. Here, experimental emitter saturation current densities are compared with simulated defect densities, namely boron interstitial clusters and dislocation loops. We report on experimental conditions, which allow separating the specific impact of both defect types on the resulting electrical properties after annealing at 1050°C and surface passivation. In that way, dislocation loops are identified to be the dominating defect species under the used implant and annealing conditions.},

keywords = {},

pubstate = {published},

tppubtype = {inproceedings}

}

@inproceedings{Krügener2016bb,

title = {Ion implantation for photovoltaic applications: Review and outlook for n-type silicon solar cells},

author = {J Krügener and F Kiefer and Y Larionova and M Rienäcker and F Haase and R Peibst and H J Osten},

editor = {IEEE},

doi = {10.1109/IIT.2016.7882886},

isbn = {978-1-5090-2025-6},

year  = {2016},

date = {2016-09-26},

booktitle = {Proceedings of the 21st International Conference on Ion Implantation Technology (IIT)},

journal = {Proceedings of the 21st International Conference on Ion Implantation Technology (IIT)},

address = {Tainan, Taiwan},

abstract = {We present a brief summary about the use of ion implantation for photovoltaic applications in the past and present. Furthermore, we highlight how ion implantation might be used in the future within the fast moving field of silicon solar cells.},

keywords = {},

pubstate = {published},

tppubtype = {inproceedings}

}

@inproceedings{Schulte-Huxel2016b,

title = {Flip-flop cell interconnection enabled by an extremely high bifaciality of screen-printed ion-implanted n-PERT Si solar cells},

author = {H Schulte-Huxel and F Kiefer and S Blankemeyer and R Witteck and M Vogt and M Köntges and Rolf and Brendel and J Krügener and R Peibst},

editor = {WIP},

doi = {10.4229/EUPVSEC20162016-2CO.2.3},

isbn = {3-936338-41-8},

year  = {2016},

date = {2016-09-01},

booktitle = {Proceedings of the 32nd European Photovoltaic Solar Energy Conference},

journal = {Proceedings of the 32nd European Photovoltaic Solar Energy Conference},

pages = {407-412},

address = {Munich, Germany},

abstract = {We present bifacial fully ion implanted and screen-printed n-PERT cells, fabricated either by applying a single co-anneal process to cure the implant damage or by applying two separate anneals after boron/BF2 and phosphorous implant, respectively. In the first case of boron implant and co-anneal our best cells achieve an independently measured front (rear) side efficiency of 21.0 % (20.43 %) and for the boron implant and separate anneal the efficiency is 21.5 % (21.31 %). To the best of our knowledge these values are the highest efficiencies reported so far for fully ion implanted and screen-printed bifacial n-PERT cells. We furthermore show that light treatment of boron-implanted and co-annealed n-PERT cells increases the cell efficiency by 0.6 %abs. This diminish the efficiency gap to separately annealed cells. We measure a bifacial factor of 99.4 % that is the highest value reported so far for any high-efficiency Si cell. The high bifaciality enables an adapted module interconnection scheme called here Flip-Flop, which is based on a front-to-front and rear-to-rear interconnection of cells with alternating orientation (n+ or p+ side facing up). Based on the measured IV-characteristic of a cell with a bifacial factor of 97 % (“conservative scenario”) we demonstrate that the Flip-Flop interconnection scheme has the potential for a module efficiency improvement of 0.5 %abs on aperture area (as compared to the conventional “all cells emitter up” configuration) despite the 3 % current mismatch. We experimentally demonstrate a monofacial 16-cell Flip-Flop module that achieves an aperture area efficiency of 20.5 %.},

keywords = {},

pubstate = {published},

tppubtype = {inproceedings}

}

@inproceedings{Krügener2014,

title = {Structural investigation of ion implantation of boron on random pyramid textured Si(100) for photovoltaic applications},

author = {J Krügener and E Bugiel and R Peibst and F Kiefer and T Ohrdes and R Brendel and H J Osten},

doi = {10.1109/IIT.2014.6940060},

isbn = {978-1-4799-5213-7},

year  = {2014},

date = {2014-06-26},

booktitle = {Proceedings of the 20th International Conference on Ion Implantation Technology (IIT)},

journal = {Proceedings of the 20th International Conference on Ion Implantation Technology},

address = {Portland, OR, USA},

keywords = {},

pubstate = {published},

tppubtype = {inproceedings}

}

@inproceedings{Peibst2014,

title = {Building blocks for back-junction back-contacted cells and modules with ion-implanted poly-Si junctions},

author = {R Peibst and U Römer and Y Larionova and H Schulte-Huxel and T Ohrdes and M Häberle and B Lim and J Krügener and D Stichtenoth and T Wütherich and C Schöllhorn and J Graff and R Brendel},

editor = {IEEE},

doi = {10.1109/PVSC.2014.6925049},

isbn = {978-1-4799-4398-2},

year  = {2014},

date = {2014-06-08},

booktitle = {2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)},

journal = {Proceedings of the 40th IEEE Photovoltaic Specialists Conference},

pages = {0852-0856},

address = {Denver, CO, USA},

keywords = {},

pubstate = {published},

tppubtype = {inproceedings}

}

@inproceedings{Römer2013,

title = {Counterdoping with Patterned Ion Implantation},

author = {U Römer and R Peibst and T Ohrdes and Y Larionova and N -P Harder and R Brendel and A Grohe and D Stichtenoth and T Wütherich and C Schöllhorn and H -J Krokoszinski and J Graff},

editor = {IEEE},

doi = {10.1109/PVSC.2013.6744375},

isbn = {978-1-4799-3299-3},

year  = {2013},

date = {2013-06-16},

booktitle = {2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)},

journal = {Proceedings of the 39th IEEE Photovoltaic Specialists Conference},

pages = {1280-1284},

address = {Tampa, FL, USA},

keywords = {},

pubstate = {published},

tppubtype = {inproceedings}

}