On the chances and challenges of combining electron-collecting nPOLO and hole-collecting Al-p+ contacts in highly efficient p-type c-Si solar cells
authors
Peibst, R. and Haase, F. and Min, B. and Hollemann, C. and Brendemühl, T. and Bothe, K. and Brendel, R.
Peibst, R. and Haase, F. and Min, B. and Hollemann, C. and Brendemühl, T. and Bothe, K. and Brendel, R.
journal
Progress in Photovoltaics: Research and Applications
Progress in Photovoltaics: Research and Applications
abstract
ISFH is following a distinct cell development roadmap, which comprises—as a short-term concept—the combination of an n-type doped electron-collecting poly-Si on oxide (POLO) junction with an Al-alloyed p+ junction for hole collection. This combination can be integrated either in front- and back-contacted back junction cells (POLO-BJ) or in interdigitated back-contacted cells (POLO-IBC). Here, we present recent progress with these two cell concepts. We report on a certified M2-sized 22.9Beteiligte Forschungsgruppen
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